ds30423 rev. 1 - 2 1 of 3 dda (lo-r1) u www.diodes.com diodes incorporated epitaxial planar die construction complementary npn types available (ddc) built-in biasing resistors lead-free device features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f pxx ym pxx ym mechanical data case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: finish - matte tin solderable per mil-std-202, method 208 terminal connections: see diagram marking: date code and marking code (see diagrams & page 2) weight: 0.006 grams (approx.) ordering information (see page 2) t c u d o r p w e n r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only schematic diagram dda (lo-r1) u pnp pre-biased small signal sot-363 dual surface mount transistor sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm p/n r1 (nom) r2 (nom) marking dda122lu DDA142JU dda122tu dda142tu 0.22k 0.47k 0.22k 0.47k 10k 10k open open p81 p82 p83 p84 characteristic symbol value unit supply voltage v cc -50 v input voltage dda122lu DDA142JU v in +5 to -6 +5 to -6 v input voltage dda122tu dda142tu v ebo (max) -5 v output current all i c -100 ma power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient air (note 3) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 3. 150mw per element must not be exceeded.
ds30423 rev. 1 - 2 2 of 3 dda (lo-r1) u www.diodes.com electrical characteristics r1, r2 types @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only characteristic symbol min typ max unit test condition input voltage dda122lu DDA142JU v l(off) -0.3 -0.3 v v cc = -5v, i o = -100 a dda122lu DDA142JU v l(on) -2.0 -2.0 v v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma output voltage v o(on) -0.3v v i o /i l = -5ma/-0.25ma input current dda122lu DDA142JU i l -28 -13 ma v i = -5v output current i o(off) -0.5 a v cc = -50v, v i = 0v dc current gain dda122lu DDA142JU g l 56 56 v o = -5v, i o = -10ma gain-bandwidth product* f t 200 mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics r1 only types @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -40 v i c = -1ma emitter-base breakdown voltage dda122tu dda142tu bv ebo -5 v i e = -50 a i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current dda122tu dda142tu i ebo -0.5 -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c = -5ma, i b = -0.25ma dc current transfer ratio dda122tu dda142tu h fe 100 100 250 250 600 600 i c = -1ma, v ce = -5v gain-bandwidth product* f t 200 mhz v ce = -10v, i e = 5ma, f = 100mhz * transistor - for reference only ordering information (note 4) device packaging shipping dda122lu-7 sot-363 3000/tape & reel DDA142JU-7 sot-363 3000/tape & reel dda122tu-7 sot-363 3000/tape & reel dda142tu-7 sot-363 3000/tape & reel notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key pxx ym pxx ym pxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw
ds30423 rev. 1 - 2 3 of 3 dda (xxxx) u www.diodes.com t c u d o r p w e n -50 050100150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 power deratin g curve p , power dissipation (mw) d (150mw per element must not be exceeded).
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